ECE109X_POWER PAGE 12 ONWARDS

A diode is in series with a 220 ohms resistor connected in parallel with a 100 ohms resistor. If the voltage across the resistors is 4V, what is the current through the diode?
40mA
18.18mA
58.18mA
None of these
A junction diode is said to be forward biased if
Anode is more negative than cathode
Anode is more positive than cathode
A voltage greater than barrier potential is applied, with cathode less positive than anode
A voltage greater than barrier potential is applied with cathode less negative than anode
A network with a diode and a capacitor that is used to shift the dc-level of the input signal
Clipper
Clamper
Peak detector
Level shifter
No-load condition means that
A. The output terminals are open
B. The load has zero resistance
C. The load is shorte
None of these
A semiconductor that is free from impurities c. Compensated Semiconductor
Elemental Semiconductor
Intrinsic Semiconductor
Extrinsic Semiconductor
Compensated Semiconductor
A silicon diode is in parallel with a germanium diode and is connected to a load resistor having a value of 20 kilo ohms and a forward supply voltage of 10V. What is the approximate voltage across the silicon diode?
10V
1V
0.7V
0.3V
A varactor exhibits
A variable resistance that depends on forward voltage
A variable capacitance that depends on forward current
A variable capacitance that depends on reverse voltage
A variable resistance that depends on reverse voltage
An example of elemental semiconductor
Aluminum Arsenide (AlAs)
Germanium (Ge)
Gallium Arsenide (GaAs)
Gallium Phosphide (GaP)
An LED
Acts as a variable resistance
Emits light when reverse-biased
Senses light when reverse-biased
Emits light when forward-biased
At absolute zero temperature, semiconductor acts as
A conductor
An insulator
A semi-insulator
Usual
At forward bias condition, what will happen to the diode resistance when the applied potential is increased?
Will increases exponentially
Will also increase
Will not change
Will decrease
Conduction of electrons is a doped semiconductor happens at
Conduction band
Forbidden band
Valence band
Nuclei band
Current flow in a semiconductor that is due to the applied electric field
Diffusion current
Conventional current
Drift Velocity
Drift current
Depletion region is an area in a semiconductor device where there are no charge carrier exist. This will be always near the junction of n-type and p-type materials. What causes this junction to be depleted by charge carriers?
Due to recombination of holes and electrons at the junction
Due to the cancellation of positively charge protons and negatively charge electrons
Due to annihilation of charge carriers
Due to the combination of positively charge holes and negatively charge electrons
Diode circuit that is used to cut a portion of input signal
Clipper
Clamper
Peak detector
Level shifter
Elements that has four valence electrons are classified as
Conductor
Insulator
Elemental Semiconductor
Compound Semiconductor
Find the line regulation of a regulator when full-load voltage is 110 V and no-load voltage is 120.
9.09%
8.33%
91.7%
None of these
For high-speed integrated circuit, which semiconductor material given below is best to be used?
Silicon
Germanium
Gallium arsenide
Carbon
Half-wave rectifier is a good example of
A series clamper
A parallel clamper
A parallel clipper
A series clipper
If Ic is 50mA and Ib is 1mA, then beta is
0.02
100
50
500
If the substance used in doping has less than four valence electrons, it is known as
Acceptor
Donor
Trivalent
Pentavalent
Impurities with five valence electrons
Acceptor
Donor
Trivalent
Pentavalent
In a semiconductor material, what will happen to the number of free electrons when the temperature rises?
Increases
Decreases
Remains the same
Decreases Exponetially
In every increase of 10 degrees Centigrade in the operating temperature of a diode will cause its reverse saturation current to a
Decrease
Double
Tripple
Quadruple
In materials, what do you call the area that separates the valence band and the conduction band?
a. Energy gap
B. Forbidden band
C. Insulation band
D. None of these
In the breakdown region, a zener diode behaves like a _____ source.
A. Constant voltage
B. Constant current
C. Constant resistance
D. None of these
Normally, diodes will not conduct when reverse-biased, but of the reverse voltage is increased further, a point will be reached where the diode gives up and allowing the current to surge. This voltage is one of the limiting parameter of diodes is known as
A. Breakdown voltage (Vbr)
B. Peak inverse voltage (PIV)
C. Peak reverse voltage (PRV)
D. All of these
Semiconductor whose electron and hole concentrations are equal
Doped semiconductor
Extrinsic semiconductor
Intrinsic semiconductor
Compensated semiconductor
Silicon is widely used over germanium due to its several advantages, what do you think is its most significant advantage?
Abundant
Cheap
Temperature stable
Low leakage current
The area in the semiconductor diode where there are no charge carriers.
Pn junction
Depletion region
Barrier potential
Forward bias region
The cathode of a zener diode in a voltage regulator is normally
More negative than the anode
More positive than the anode
At +0.7
Grounded
The chemical bond that is present in a crystal lattice of silicon atoms.
Covalent bond
Electrovalent bond
Ionic bond
Metallic bond
The disadvantage of a half-wave rectifier is that the
Output is difficult to filter
Components are expensive
Diodes must have a higher power rating
None of these
The electrical resistance of a semiconductor material will _____ as the temperature increases.
Increase
Decrease
Increase Exponentially
Not change
The electron flow in a semiconductor material is
Known as the conventional current
Opposite in direction of hole flow
The same direction with hole flow
The drift current
The forward current in a conducting diode will _____ as the operating temperature increases
Not be affected
Decrease
Decrease Exponentially
Increase
The maximum power the diode can handle
Maximum dissipation power
Maximum derating power
Maximum consumption power
Breakdown power
The most extensively used semiconductor
Silicon
Germanium
Gallium phosphide
Gallium arsenide
The movement of charge carriers in a semiconductor even without the application of electric potential
Diffusion current
Conventional current
Drift velocity
Drift current
The name of pure semiconductor material that has an equal number of electrons and holes
N-type
P-type
Intrinsic
Pure-type
The primary use of Zener diodes in electronic circuits
Resistance regulator
Voltage regulator
Rectifier
Clipper
The process of adding impurities in a semiconductor material
Growing
Diffusion
Doping
Depleting
The ripple factor of a power supply is a measure of
Its filter efficiency
Its voltage regulation
Diode rating
Purity of power output
The term bias means
A dc voltage is applied to control the operation of a device
The ratio of majority carriers to minority carriers
The amount of current across a diode
None of these
What causes the depletion layer?
Recombination
Ionization
PN Junction
Doping
What is formed when n-type and p-type semiconductors are brought together?
Pn-junction
Semiconductor-junction
Energy band gap
Depletion region
What is the overall electrical charge of the N-material in a semiconductor?
Zero
Negative
Positive
Undefined
What will happen to the barrier potential of the diode when it operates at higher temperatures?
Increase
Increase exponentially
Decrease
Decrease exponentially
What will happen to the power handling capability of the diode if it is to be operated at a higher temperature?
Decrease
Increase
 
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