PSD (1)
Test Your Knowledge on Power Semiconductor Devices
Welcome to the Power Semiconductor Devices Quiz! This quiz is designed for anyone interested in testing their understanding of power semiconductor technology, including VDMOSFETs, P-i-N diodes, and modern materials like GaN and synthetic diamond.
Whether you're a student, a professional, or just a curious learner, challenge yourself with questions that cover key concepts in the field!
For the power VDMOSFET:
The on-state current is transported by both electrons and holes
The current flows vertically in the drift region
The current flows vertically in the channel region
The source, the gate and the drain are placed on the same part with respect to the drift region
The current flows horizontally in the channel region
Which of the following materials can be employed as the semiconducting layer of a power semiconductor device?
GaN and Gold
Silicon and SiC
Silicon and silver
Silicon and Aluminum
Synthetic diamond and GaN
One wants the leakage current in a power P-i-N diode to be:
Larger than the on-state current
3A
Equal to the on-state current
As small as possible
As large as possible
At breakdown, the current:
Consists only of electrons
Increases abruptly
Stays constant
Decreases abruptly
Consist only of holes
Conductivity modulation refers to:
P-type doping the drift layer
Injecting only electrons in the drift region, in excess compared to the initial drift doping
N-type doping the drift layer
Injecting only holes in the drift region, in excess compared to the initial drift doping
Injecting electrons and holes in drift region, in excess compared to the initial drift doping
As opposed to power DMOSFET, a COOLMOS has:
An oblique channel
A Schottky contact
Unipolar conduction
Larger on-state resistance
Both n-type and p-type regions in the drift area
The role of the termination structure is to
Increase the on-state current
Decrease the on-state current
Increase the off-state current
Increase the breakdown voltage
Reduce the area of the device
Which of the following statements is true?
A power P-i-N diode has Schottky contact
A power Schottky diode has two Schottky contacts
A power Schottky diode has no Schottky contact
A power Schottky diode is an unipolar device
A power Schottky diode is a bipolar device
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