PSD(2)
Power Electronics Quiz
Test your knowledge of power electronics with this intriguing quiz focused on IGBTs, DMOSFETs, and other crucial components. Dive deep into the characteristics and behaviors of different power devices.
Prepare for questions about:
- Device characteristics
- Switching times and resistivity
- Breakdown mechanisms
The IGBT is :
Has two types of on-state
Has single type of blocking type
The star-device of power electronics
An unipolar device
A power BJT triggered by the channel of a power MOSFET
The ON-OFF switching time of a PiN power diode ???
Increases, as the thickness of the drift layer is decreases
Decreases, as the thickness of the drift layer increases
Decreases, as the thickness of the drift layer is decreases
Decreases, as the carrier lifetime, in the drift region, increases
Is the period of time required to stop the flow of the current through the diodet
When comparing power DMOSFET - COOLMOS - IGBT - GTO, considering drift regions with the same geometry and doping level:
The BV of the power DMOSFET is higher than the BV of the IGBT
The GTO has the highest BV
The BV of the COOLMOS is larger than the BV of the IGBT
The BV of the COOLMOS is smaller than the BV of the IGBT
The IGBT has the highest BV
Which of the following statements is true regard to the drift layer?
It is characteristic for every power device and it is always the thinner layer
At breakdown, it has no carriers in the case of non-punch-through structures
At breakdown, it has no carriers in the case of punch-through structures
It is characteristic for every power device and it is always medium or lowly doped
It is characteristic for every power device and it is always n-type
What happens with the resistivity and carrier mobility in a semiconducting material as the material doping gets higher and higher ?
The resistivity decreases, the mobility increases
Both the resistivity and the mobility decrease
The resistivity decreases, the mobility remains constant
The resistivity increases, the mobility decreases
Both resistivity and mobility increase
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