PEC
Static Converters and Transducer Knowledge Quiz
Test your expertise in the world of static converters, transducers, and power electronic devices with this comprehensive quiz. Designed for enthusiasts and professionals alike, this quiz covers essential concepts to challenge your understanding.
Prepare to tackle questions on:
- MOSFET operation
- Power amplifier classes
- Energy efficiency in converters
- Operational amplifiers and oscillation conditions
What is a static converter?
Equipment whose force part contains semiconductor power elements
B) Equipment in which the power part contains energy recuperates
C) Mechanical energy conversion equipment
D) Kinetic energy to static energy conversion equipment
The role of transducers is to convert the quantities collected from the system into electrical quantities (voltages or currents)
A) in sizes compatible in shape and value with the inputs
B) in numerically compatible sizes only
C) in sizes compatible only as a shape
D) only in abstract sizes
Static converters can be classified:
A) C.S. From a non-energy point of view;
B) C.S. In terms of switching;
C) C.S. In terms of power;
D) C.S. From a technological point of view
The MOSFET is locked if:
A) grid-source voltage is above the threshold value UGS (th)
B) grid-source voltage is below the threshold value UGS th
C) grid-source voltage is high enough UGS
D) the grid-source voltage does not matter how high it is compared to UGS (th)
The MOSFET is in good conduction if:
B) the grid-source voltage is high enough > UGSf(th
B) the grid-source voltage is low enough < UGSf(th)
C) the grid-source voltage is zero
D) the grid-source voltage does not matter how low it is.
The variation rates of the drain-source current end voltage at a MOSFET are dependent on
A) the current in the grid-source circuit, during the charging and discharging periods of the parasitic capacity.
B) the switching frequency of the control pulses
C) only by the charging periods of the abandoned capacity
D) only by the discharge periods of the parasitic capacity
At PWM converters the carrier signals can be:
A) trapezoidal,
B) circular
C) rectangular
D) it does not matte'
High energy yields at converters are obtained if they use switching speeds of MOSFETs:
A) as high as possible accepted by the Ferrite inductors used
B) as small as possible on FeSi inductors
C) media accepted by both Ferrite inductors and Fe Si inductors
D) the switching frequency in the energy efficiency does not matter
The reduction of a direct voltage is done, without transformer, by means of a converter of the type:
A) Back
B) Boost
C) Flip Flop
D) Changing the switching frequency
Class D power amplifiers use circuits with devices:
A) of complementary power
B) only of different types, but with a hybrid bridge
C) only power devices connected in parallel
D) only of the same type, but in series with Zenner diodes
In order for a circuit to oscillate sinusoidally, the following condition (s) must be met (A-amplification; B = attenuation):
B*A = 1
|B| *|A| = 1
Not to have a positive reaction;
No condition
For a fixed current, the voltage drop across a Si diode changes with increasing temperature as follows;
A) increases by — [1.6: 2.4] irnV / degree;
B) decreases by — [1,6: 2.4] rnV / degree;
C) increases by — [10:20) mV / degree;
D) does not change;
For an element and a load given to the switching circuits (Ud, Id, tca and vt are constant), the share of energy dissipated in the conduction:
A) decreases with increasing command frequency:
B) increases at high frequencies:
C) are not dominated by priming and blocking losses:
D) to reduce it, the amplitude of the voltage and current must not be reduced simultaneously
The GTO device,
A) is a device with pnpn structure, which can be primed in the same way as the thyristor, respectively, by injecting a positive current in the G-K circuit but, it can also be blocked by extracting a current from the G-K circuit.
B) is a device with pnpn structure, which can be blocked in the same way as the thyristor, respectively, by injecting a positive current in the G-K circuit but, it can be brought into conduction by extracting a current from the G-K circuit.
C) is a device with a pnpn structure, in which the direction of the current injection in the G-K circuit does not matter because it enters the conduction anyway.
D) is a device with metastructure, which can be blocked in the same way as the ag,transistor, by injecting a positive current in the B-K circuit, but it can also be conducted by extracting a current from the B-K circuit.
The transistor symbol in the figure represents:
A) MOSFET transistor with N channel
B) MOSFET transistor with P-channel
C) IGBT transistor with N-channel
D) IGBT transistor with P channel
The adjacent figure shows:
A) Equivalent scheme of an isolated base bipolar transistor (IGBT);
B) Equivalent scheme of a GTO thyristor;
C) Equivalent scheme of an N-channel MOSFET transistor protected with bipolar transistor;
D) Equivalent diagram of a PNP transistor with current protected collector
In the stable circuit made with an operational amplifier powered at +/-15 V
A) the charging and discharging of capacitor C1 is done according to an exponential law
B) the charging and discharging of capacitor C1 is done according to a linear law
The charging and discharging of capacitor C1 is done according to a rectangular law
The charging and discharging of capacitor C1 is done according to a triangular law
In the adjacent circuit the time constant of the integrating circuit is:
10 ms
100 ms
1000 ms
10 s
The circuit in the side diagram represents:
A) a small signal amplifier in 4 dials
B) A controlled phase shift circuit
C) A sinusoidal oscillator with a phase shift of 1800
D) A sinusoidal oscillator with a phase shift of 45° per cell
In the adjacent circuit diode D;
A) Ensure the current conduction through the switching transistor T
B) Complete the circuit for current
C) Ensure the conduction path for the current induced by L when blocking T
D) It is part of the LRC resonant circuit
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